The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Feb. 08, 2011
Shiro Hino, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Shuhei Nakata, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Shoyu Watanabe, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Yukiyasu Nakao, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Shuhei Nakata, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Shoyu Watanabe, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Yukiyasu Nakao, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor substrate of a first conductivity type, a drift layer of the first conductivity type which is formed on a first main surface of the semiconductor substrate, a second well region of a second conductivity type which is formed to surround a cell region of the drift layer, and a source pad for electrically connecting the second well regions and a source region of the cell region through a first well contact hole provided to penetrate a gate insulating film on the second well region, a second well contact hole provided to penetrate a field insulating film on the second well region and a source contact hole.