The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Jun. 05, 2014
International Business Machines Corporation, Armonk, NY (US);
James P. Di Sarro, Essex Junction, VT (US);
Robert J. Gauthier, Jr., Hinesburg, VT (US);
Tom C. Lee, Essex Junction, VT (US);
Junjun Li, Williston, VT (US);
Souvick Mitra, Essex Junction, VT (US);
Chengwen Pei, Danbury, CT (US);
Christopher S. Putnam, Hinesburg, VT (US);
Theodorus E. Standaert, Clifton Park, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Device structures and design structures that include a silicon controlled rectifier, as well as fabrication methods for such device structures. A well is formed in the device layer of a silicon-on-insulator substrate. A silicon controlled rectifier is formed that includes an anode in the well. A deep trench capacitor is formed that includes a plate coupled with the well. The plate of the deep trench capacitor extends from the device layer through a buried insulator layer of the silicon-on-insulator substrate and into a handle wafer of the silicon-on-insulator substrate.