The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
May. 05, 2011
Chin-wen Lin, Jhunan Township, Miaoli County, TW;
Chuan-i Huang, Taipei, TW;
Chung-chin Huang, Pingtung, TW;
Ted Hong Shinn, Hsinchu, TW;
Chin-Wen Lin, Jhunan Township, Miaoli County, TW;
Chuan-I Huang, Taipei, TW;
Chung-Chin Huang, Pingtung, TW;
Ted Hong Shinn, Hsinchu, TW;
E Ink Holdings Inc., Hsinchu, TW;
Abstract
A metal oxide semiconductor structure and a production method thereof, the structure including: a substrate; a gate electrode, deposited on the substrate; a gate insulation layer, deposited over the gate electrode and the substrate; an IGZO layer, deposited on the gate insulation layer and functioning as a channel; a source electrode, deposited on the gate insulation layer and being at one side of the IGZO layer; a drain electrode, deposited on the gate insulation layer and being at another side of the IGZO layer; a first passivation layer, deposited over the source electrode, the IGZO layer, and the drain electrode; a second passivation layer, deposited over the first passivation layer; and an opaque resin layer, deposited over the source electrode, the second passivation layer, and the drain electrode.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile