The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Sep. 25, 2013
Applicant:

Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);

Inventors:

Stanislav S. Todorov, Topsfield, MA (US);

George M. Gammel, Marblehead, MA (US);

Richard Allen Sprenkle, South Hamilton, MA (US);

Norman E. Hussey, Middleton, MA (US);

Frank Sinclair, Boston, MA (US);

Shengwu Chang, South Hamilton, MA (US);

Joseph C. Olson, Beverly, MA (US);

David Roger Timberlake, Lexington, MA (US);

Kurt T. Decker-Lucke, Hamilton, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G21K 5/04 (2006.01); C23C 14/54 (2006.01); G21K 5/00 (2006.01);
U.S. Cl.
CPC ...
C23C 14/54 (2013.01); G21K 5/00 (2013.01);
Abstract

A system to control an ion beam in an ion implanter includes a detector to perform a plurality of beam current measurements of the ion beam along a first direction perpendicular to a direction of propagation of the ion beam. The system also includes an analysis component to determine a beam current profile based upon the plurality of beam current measurements, the beam current profile comprising a variation of beam current along the first direction; and an adjustment component to adjust a height of the ion beam along the first direction when the beam current profile indicates the beam height is below a threshold.


Find Patent Forward Citations

Loading…