The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9006115 B1

PDF
Full Text
Expired
Date of Patent:
Apr. 14, 2015

Filed:

Jun. 28, 2013
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Tomoyuki Obu, Nirasaki, JP;

Masaki Kurokawa, Nirasaki, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/56 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02271 (2013.01); H01L 21/02337 (2013.01); H01L 21/31111 (2013.01); C23C 16/401 (2013.01); C23C 16/56 (2013.01);
Abstract

A method of forming a silicone oxide film includes: forming a silicon oxide film on a plurality of target objects by supplying a chlorine-containing silicon source into a reaction chamber accommodating the plurality of target objects; and modifying the silicon oxide film, which is formed by forming the silicon oxide film, by supplying hydrogen and oxygen or hydrogen and nitrous oxide into the reaction chamber and making an interior of the reaction chamber be under a hydrogen-oxygen atmosphere or a hydrogen-nitrous oxide atmosphere.


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Obu, Tomoyuki. (2015). Silicon oxide film forming method and apparatus (U.S. Patent No. 9006115). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9006115

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