The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 14, 2015

Filed:

Mar. 11, 2012
Applicants:

Chih-jung Wang, Hsinchu, TW;

Tong-yu Chen, Hsinchu, TW;

Inventors:

Chih-Jung Wang, Hsinchu, TW;

Tong-Yu Chen, Hsinchu, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0337 (2013.01); H01L 21/0338 (2013.01);
Abstract

A method for fabricating a patterned structure in a semiconductor device is provided. First, a substrate with a first region and a second region is provided. Then, a plurality of sacrificial patterns is respectively formed within the first region and the second region. A first spacer is then formed on the sidewalls of each of the sacrificial patterns followed by forming a mask layer to cover the sacrificial patterns located within the first region. Finally, the first spacer exposed from the mask layer is trimmed to be a second spacer and the mask layer is then removed.


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