The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Apr. 16, 2013
Applicant:
Taiwan Semiconductor Manufacturing Co. Ltd., Hsin-Chu, TW;
Inventors:
Ming-Chang Hsieh, Jhudong Township, TW;
Kong-Beng Thei, Pao-Shan Village, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/20 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0338 (2013.01); H01L 21/0337 (2013.01); G03F 7/70475 (2013.01);
Abstract
A method of fabricating a semiconductor device is disclosed. A photosensitive material is coated over the device. A plurality of masks for a chip layout are obtained. The plurality of masks are exposed to encompass a chip area of the device using at least one reticle repeatedly. The at least one reticle is of a set of reticles. The chip area has a resultant dimension greater than a dimension of the at least one reticle. A developer is used to remove soluble portions of the photosensitive material forming a resist pattern in the chip area.