The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2015
Filed:
Apr. 27, 2011
Chien-teh Kao, Sunnyvale, CA (US);
Hyman W. H. Lam, San Jose, CA (US);
Mei Chang, Saratoga, CA (US);
David T. OR, Santa Clara, CA (US);
Nicholas R. Denny, Santa Clara, CA (US);
Xiaoxiong Yuan, San Jose, CA (US);
Chien-Teh Kao, Sunnyvale, CA (US);
Hyman W. H. Lam, San Jose, CA (US);
Mei Chang, Saratoga, CA (US);
David T. Or, Santa Clara, CA (US);
Nicholas R. Denny, Santa Clara, CA (US);
Xiaoxiong Yuan, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
An apparatus and a method for depositing materials, and more particularly a vapor deposition chamber configured to deposit a material during a plasma-enhanced process are provided. In one embodiment a chamber comprises a chamber body defining a process volume, a substrate support disposed in the process volume and configured to support one or more substrates, a process lid assembly disposed over the substrate support, wherein the process lid assembly has a plasma cavity configured to generate a plasma and provide one or more radical species to the process volume, a RF (radio frequency) power source coupled to the gas distribution assembly, a plasma forming gas source coupled with the process lid assembly, and a reactant gas source coupled with the process lid assembly.