The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Jun. 26, 2012
Applicants:

Katsunori Azuma, Hitachi, JP;

Kentaro Yasuda, Hitachi, JP;

Takahiro Fujita, Fussa, JP;

Katsuaki Saito, Iwaki, JP;

Yoshihiko Koike, Hitachinaka, JP;

Michiaki Hiyoshi, Yokohama, JP;

Inventors:

Katsunori Azuma, Hitachi, JP;

Kentaro Yasuda, Hitachi, JP;

Takahiro Fujita, Fussa, JP;

Katsuaki Saito, Iwaki, JP;

Yoshihiko Koike, Hitachinaka, JP;

Michiaki Hiyoshi, Yokohama, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 25/07 (2006.01);
U.S. Cl.
CPC ...
H01L 25/072 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/49175 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/30107 (2013.01);
Abstract

The respective main electrodes of the semiconductor switching elements such as IGBTs, which are respectively mounted on the plurality of insulating boards, are electrically connected to each other via the conductor member. This configuration makes it possible to suppress the occurrence of the resonant voltage due to the junction capacity and the parasitic inductance of each semiconductor switching element.


Find Patent Forward Citations

Loading…