The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Sep. 26, 2011
Szu-hao Lai, Kaohsiung, TW;
Yu-ren Wang, Tainan, TW;
Po-chun Chen, Tainan, TW;
Chih-hsun Lin, Ping-Tung County, TW;
Che-nan Tsai, Tainan, TW;
Chun-ling Lin, Tainan, TW;
Chiu-hsien Yeh, Tainan, TW;
Te-lin Sun, Kaohsiung, TW;
Szu-Hao Lai, Kaohsiung, TW;
Yu-Ren Wang, Tainan, TW;
Po-Chun Chen, Tainan, TW;
Chih-Hsun Lin, Ping-Tung County, TW;
Che-Nan Tsai, Tainan, TW;
Chun-Ling Lin, Tainan, TW;
Chiu-Hsien Yeh, Tainan, TW;
Te-Lin Sun, Kaohsiung, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor structure includes a substrate, an oxide layer, a metallic oxynitride layer and a metallic oxide layer. The oxide layer is located on the substrate. The metallic oxynitride layer is located on the oxide layer. The metallic oxide layer is located on the metallic oxynitride layer. In addition, the present invention also provides a semiconductor process for forming the semiconductor structure.