The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
May. 16, 2012
Kenichi Miyahara, Itami, JP;
Takayuki Nishiura, Itami, JP;
Mitsutaka Tsubokura, Itami, JP;
Shinya Fujiwara, Itami, JP;
Kenichi Miyahara, Itami, JP;
Takayuki Nishiura, Itami, JP;
Mitsutaka Tsubokura, Itami, JP;
Shinya Fujiwara, Itami, JP;
Sumitomo Electric Industries, Ltd., Osaka-shi, Osaka, JP;
Abstract
An object is to provide a compound semiconductor substrate and a surface-treatment method thereof, in which, even after the treated substrate is stored for a long period of time, resistance-value defects do not occur. Even when the compound semiconductor substrate is stored for a long period of time and an epitaxial film is then formed thereon, electrical-characteristic defects do not occur. The semiconductor substrate according to the present invention is a compound semiconductor substrate at least one major surface of which is mirror-polished, the mirror-polished surface being covered with an organic substance containing hydrogen (H), carbon (C), and oxygen (O) and alternatively a compound semiconductor substrate at least one major surface of which is mirror-finished, wherein a silicon (Si) peak concentration at an interface between an epitaxial film grown at a growth temperature of 550° C. and the compound semiconductor substrate is 2×10cmor less.