The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Aug. 17, 2012
Masatoshi Fukuda, Akiruno, JP;
Masatoshi Fukuda, Akiruno, JP;
Fujitsu Semiconductor Limited, Yokohama, JP;
Abstract
A semiconductor device includes: a semiconductor substrate; a first transistor which is formed on the semiconductor substrate and includes a source/drain region and a gate electrode; an insulating film which covers the source/drain region and the gate electrode of the first transistor; and a first contact plug which is formed in the insulating film and is connected to the source/drain region or the gate electrode of the first transistor, wherein the first contact plug includes a first column section which extends in a thickness direction of the insulating film and is in contact with the source/drain region or the gate electrode of the first transistor, and a first flange section which juts out from an upper portion of the first column section in a direction parallel to a surface of the insulating film, and an upper surface of the first flange section is planarized.