The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Mar. 29, 2011
Hirotaka Hamamura, Kodaira, JP;
Yasuhiro Shimamoto, Tokorozawa, JP;
Hiroyuki Okino, Kokubunji, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
A MOSFET having a high mobility may be obtained by introducing nitrogen to the channel region or the interface between the gate dielectric film and the SiC substrate of the SiC MOSFET, but there is a problem that a normally-on MOSFET is obtained. For realizing both a high mobility and normally-off, and for providing a SiC MOSFET having further high reliability, nitrogen is introduced to the channel region of the SiC substrate or the interface between the gate dielectric film and the SiC substrate, and furthermore a metal oxide film having a thickness of 10%, or less of the total thickness of the gate dielectric film is inserted in the gate dielectric film.