The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Jan. 17, 2013
Applicant:

Massachusetts Institute of Technology, Cambridge, MA (US);

Inventors:

Silvija Gradecak, Cambridge, MA (US);

Chun-Hao Tseng, Taichung, TW;

Sung Keun Lim, Revere, MA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 31/00 (2006.01); H01L 29/66 (2006.01); B22F 1/00 (2006.01); B22F 9/24 (2006.01); B82Y 30/00 (2011.01); C30B 7/14 (2006.01); C30B 29/02 (2006.01); C30B 29/60 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66977 (2013.01); B22F 1/0018 (2013.01); B22F 9/24 (2013.01); B82Y 30/00 (2013.01); C30B 7/14 (2013.01); C30B 29/02 (2013.01); C30B 29/605 (2013.01); B22F 2999/00 (2013.01); Y10S 977/815 (2013.01); Y10S 977/893 (2013.01);
Abstract

A noble metal nanoparticle can be grown on a semiconductor substrate by contacting a predetermined region of the substrate with a solution including noble metal ions. The predetermined region of the semiconductor substrate can be exposed by applying a polymeric layer over the substrate selectively removing a portion of the polymeric layer. The nanoparticles can be prepared in a predetermined pattern. The nanoparticle can be formed with a barrier separating it from another nanoparticle on the substrate; for example, nanoparticle can be located in a pit etched in the substrate. The size and location of the nanoparticle can be stable at elevated temperatures.


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