The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Apr. 07, 2014
Applicant:

SK Hynix Inc., Icheon, KR;

Inventors:

Keun Do Ban, Yongin, KR;

Cheol Kyu Bok, Pohang, KR;

Myoung Soo Kim, Seongnam, KR;

Jung Hyung Lee, Seoul, KR;

Hyun Kyung Shim, Seoul, KR;

Chang Il Oh, Seongnam, KR;

Assignee:

SK Hynix Inc., Icheon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01); H01L 21/033 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0332 (2013.01); H01L 21/30604 (2013.01);
Abstract

Methods of fabricating nano-scale structures are provided. A method includes forming a first hard mask pattern corresponding to first openings in a dense region, forming first guide elements on the first hard mask pattern aligned with the first openings, and forming second hard mask patterns in a sparse region to provide isolated patterns. A blocking layer is formed in the sparse region to cover the second hard mask patterns. A first domain and second domains are formed in the dense region using a phase separation of a block co-polymer layer. Related nano-scale structures are also provided.


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