The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Dec. 19, 2013
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Vincent Larrey, La Murette, FR;
Laurent Vandroux, Le Cheylas, FR;
Audrey Berthelot, St Ismier, FR;
Marie-Helene Vaudaine, Seyssins, FR;
Abstract
The process for the production of at least one silicon-based nanoelement (), in particular a nanowire, comprises the following stages: providing a substrate comprising, at the surface, a first layer () comprising electrically doped silicon; forming, on the first layer (), a second layer () based on silicon oxide with carbon atoms () dispersed in the said second layer (); and exposing the first and second layers () to an oxidizing atmosphere, so as to oxidize at least a first section () of the first layer () at the interface of the said first layer () with the second layer () and to form the said at least one nanoelement () at the said first section ().