The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2015
Filed:
Jul. 24, 2013
Applicants:
Tohoku University, Sendai-shi, Miyagi, JP;
Furukawa Electric Co., Ltd., Chiyoda-ku, Tokyo, JP;
Inventors:
Assignees:
Tohoku University, Miyagi, JP;
Furukawa Electric Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01L 29/66462 (2013.01); H01L 29/66522 (2013.01); H01L 29/7783 (2013.01); H01L 21/02521 (2013.01); H01L 29/7827 (2013.01); H01L 21/02057 (2013.01); H01L 21/30621 (2013.01); H01L 21/0254 (2013.01); H01L 21/02664 (2013.01); H01L 29/2003 (2013.01); H01L 21/0237 (2013.01); H01L 21/02458 (2013.01); H01L 21/02507 (2013.01); H01L 29/4236 (2013.01); H01L 29/51 (2013.01);
Abstract
Provided is a method of manufacturing a gallium-nitride-based semiconductor device, comprising forming a first semiconductor layer of a gallium-nitride-based semiconductor; and forming a recessed portion by dry etching a portion of the first semiconductor layer via a microwave plasma process using a bromine-based gas.