The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Mar. 18, 2013
Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventor:

Wen-Yueh Jang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/337 (2006.01); H01L 45/00 (2006.01); H01L 29/66 (2006.01); H01L 27/102 (2006.01); H01L 27/22 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/16 (2013.01); H01L 29/66272 (2013.01); H01L 27/1022 (2013.01); H01L 27/1026 (2013.01); H01L 27/226 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01);
Abstract

A method for fabricating a semiconductor device is described. A plurality of isolation structures is formed in a substrate. The isolation structures are arranged in parallel and extend along a first direction. A well of a first conductive type is formed in the substrate. A plurality of first doped regions of a second conductive type is formed in the well. Each of the first doped regions is formed between two adjacent isolation structures. A plurality of gates of the second conductive type is formed on the substrate. The gates are arranged in parallel and extend along a second direction different from the first direction. One of the first doped regions is connected to one of the gates. A plurality of second doped regions of the first conductive type is formed in the well. Each of the second doped regions is formed in the first doped regions between two adjacent gates.


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