The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Nov. 27, 2013
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Sandra Obernhuber, Lappersdorf, DE;

Christof Jalics, Aalen, DE;

Joerg Adler, Regensburg, DE;

Uwe Hoeckele, Regensburg, DE;

Walter Preis, Regensburg, DE;

Reinhard Goellner, Regensburg, DE;

Tanja Ippisch, Steinberg am See, DE;

Patricia Nickut, Burghausen, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); H01L 41/297 (2013.01); H03H 3/04 (2006.01);
U.S. Cl.
CPC ...
H01L 41/297 (2013.01); H03H 3/04 (2013.01);
Abstract

A method for manufacturing a device on a substrate includes forming a layer structure on the substrate, forming an auxiliary layer on the layer structure, forming a planarization layer on the auxiliary layer and on the substrate, exposing the auxiliary layer by a chemical mechanical polishing process and removing at least partly the auxiliary layer to form a planar surface of the remaining auxiliary layer or of the layer structure and the planarization layer. The chemical mechanical polishing process has a first removal rate with respect to the planarization layer and a second removal rate with respect to the auxiliary layer and the first removal rate is greater than the second removal rate.


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