The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Dec. 19, 2007
Applicants:

Wei Liu, San Jose, CA (US);

Johanes F. Swenberg, Los Gatos, CA (US);

Hanh D. Nguyen, San Jose, CA (US);

Son T. Nguyen, San Jose, CA (US);

Roger Curtis, Stockton, CA (US);

Philip A. Bottini, Santa Clara, CA (US);

Michael J. Mark, San Jose, CA (US);

Inventors:

Wei Liu, San Jose, CA (US);

Johanes F. Swenberg, Los Gatos, CA (US);

Hanh D. Nguyen, San Jose, CA (US);

Son T. Nguyen, San Jose, CA (US);

Roger Curtis, Stockton, CA (US);

Philip A. Bottini, Santa Clara, CA (US);

Michael J. Mark, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/50 (2006.01); C23C 16/00 (2006.01); C23F 1/00 (2006.01); H01L 21/306 (2006.01); H01L 21/687 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 21/68742 (2013.01); H01J 37/321 (2013.01); H01J 37/32623 (2013.01); H01L 21/67069 (2013.01); H01L 21/68735 (2013.01);
Abstract

The present invention generally provides methods and apparatus for controlling edge performance during process. One embodiment of the present invention provides an apparatus comprising a chamber body defining a process volume, a gas inlet configured to flow a process gas into the process volume, and a supporting pedestal disposed in the process volume. The supporting pedestal comprises a top plate having a substrate supporting surface configured to receive and support the substrate on a backside, and an edge surface configured to circumscribe the substrate along an outer edge of the substrate, and a height difference between a top surface of the substrate and the edge surface is used to control exposure of an edge region of the substrate to the process gas.


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