The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 07, 2015

Filed:

Sep. 22, 2008
Applicants:

Katsuhiro Imai, Nagoya, JP;

Makoto Iwai, Kasugai, JP;

Takanao Shimodaira, Nagoya, JP;

Takatomo Sasaki, Suita, JP;

Yusuke Mori, Suita, JP;

Fumio Kawamura, Suita, JP;

Inventors:

Katsuhiro Imai, Nagoya, JP;

Makoto Iwai, Kasugai, JP;

Takanao Shimodaira, Nagoya, JP;

Takatomo Sasaki, Suita, JP;

Yusuke Mori, Suita, JP;

Fumio Kawamura, Suita, JP;

Assignees:

NGK Insulators, Ltd., Nagoya, JP;

Osaka University, Suita, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 9/12 (2006.01); C30B 35/00 (2006.01); C30B 9/00 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C30B 9/00 (2013.01); C30B 29/403 (2013.01); C30B 29/406 (2013.01);
Abstract

A growth apparatus is used having a plurality of crucibles each for containing the solution, a heating element for heating the crucible, and a pressure vessel for containing at least the crucibles and the heating element and for filling an atmosphere comprising at least nitrogen gas. One seed crystal is put in each of the crucibles to grow the nitride single crystal on the seed crystal.


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