The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Jul. 06, 2012
Philip A. Stupar, Oxnard, CA (US);
Robert L. Borwick, Iii, Thousand Oaks, CA (US);
Robert E. Mihailovich, Newbury Park, CA (US);
Jeffrey F. Denatale, Thousand Oaks, CA (US);
Philip A. Stupar, Oxnard, CA (US);
Robert L. Borwick, III, Thousand Oaks, CA (US);
Robert E. Mihailovich, Newbury Park, CA (US);
Jeffrey F. DeNatale, Thousand Oaks, CA (US);
Teledyne Scientific & Imaging, LLC, Thousand Oaks, CA (US);
Abstract
A method of fabricating silicon waveguides with embedded active circuitry from silicon-on-insulator wafers utilizes photolithographic microfabrication techniques to define waveguide structures and embedded circuit recesses for receiving integrated circuitry. The method utilizes a double masking layer, one layer of which at least partially defines at least one waveguide and the other layer of which at least partially defines the at least one waveguide and at least one embedded circuit recess. The photolithographic microfabrication techniques are sufficiently precise for the required small structural features of high frequency waveguides and the double masking layer allows the method to be completed more efficiently. The basic fabrication method may be extended to provide batch arrays to mass produce silicon waveguide devices.