The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

Feb. 06, 2013
Applicant:

Elite Semiconductor Memory Technology Inc., Hsinchu, TW;

Inventor:

Cheng-Hung Tsai, New Taipei, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/10 (2013.01);
Abstract

A method for programming a plurality of memory cells of a nonvolatile semiconductor memory device comprises the steps of: dividing the plurality of memory cells into M number of groups (M is an integer); successively selecting each of the M number of groups; generating M number of successive overlapping pulse signals; and programming the memory cells of the M number of groups in response to the respective M number of successive overlapping pulse signals.


Find Patent Forward Citations

Tsai, Cheng-Hung. (2015). Nonvolatile semiconductor memory device programmable via overlapping pulse signals (U.S. Patent No. 8995187). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8995187

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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