The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

Mar. 15, 2013
Applicants:

Yibing Wang, Pasadena, CA (US);

Eric Fossum, Wolfeboro, NH (US);

Ilia Ovsiannikov, Studio City, CA (US);

Yoon Dong Park, Osan-Si, KR;

Dong Ki Min, Seoul, KR;

Inventors:

Yibing Wang, Pasadena, CA (US);

Eric Fossum, Wolfeboro, NH (US);

Ilia Ovsiannikov, Studio City, CA (US);

Yoon Dong Park, Osan-Si, KR;

Dong Ki Min, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 3/14 (2006.01); H04N 5/335 (2011.01); H04N 5/217 (2011.01); H04N 5/359 (2011.01); H04N 5/372 (2011.01);
U.S. Cl.
CPC ...
H04N 5/359 (2013.01); H04N 5/372 (2013.01);
Abstract

An image sensor includes a first photoelectric conversion element supplying charges to a first charge storage node, a first charge storage element adjusting an amount of charges supplied from a charge supply source to the first charge storage node in response to a feedback signal, and a feedback signal generating circuit generating the feedback signal based on an amount of charges in the first charge storage node.


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