The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Dec. 23, 2013
Hamamatsu Photonics K.k., Hamamatsu-shi, Shizuoka, JP;
Kazuhisa Yamamura, Hamamatsu, JP;
Akira Sakamoto, Hamamatsu, JP;
Terumasa Nagano, Hamamatsu, JP;
Yoshitaka Ishikawa, Hamamatsu, JP;
Satoshi Kawai, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A photodiode array PDAis provided with a substrate S wherein a plurality of photodetecting channels CH have an n-type semiconductor layer. The photodiode array PDAis provided with a ptype semiconductor layerformed on the n-type semiconductor layer, resistorsprovided for the respective photodetecting channels CH and each having one end portion connected to a signal conducting wire, and an n-type separating portionformed between the plurality of photodetecting channels CH. The ptype semiconductor layerforms pn junctions at an interface to the n-type semiconductor layerand has a plurality of multiplication regions AM for avalanche multiplication of carriers generated with incidence of detection target light, corresponding to the respective photodetecting channels. An irregular asperityis formed in a surface of the n-type semiconductor layerand the surface is optically exposed.