The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Sep. 10, 2009
Gerben Doornbos, Redhill, GB;
Robert Lander, Leuven, BE;
Gerben Doornbos, Redhill, GB;
Robert Lander, Leuven, BE;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A Fin FET whose fin () has an upper portion () doped with a first conductivity type and a lower portion () doped with a second conductivity type, wherein the junction () between the upper portion () and the lower portion () acts as a diode; and the FinFET further comprises: at least one layer () of high-k dielectric material (for example SiN) adjacent at least one side of the fin () for redistributing a potential drop more evenly over the diode, compared to if the at least one layer of high-k dielectric material were not present, when the upper portion () is connected to a first potential and the lower portion () is connected to a second potential thereby providing the potential drop across the junction (). Examples of the k value for the high-k dielectric material are k≧5, k≧7.5, and k≧20.