The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Mar. 08, 2012
Mei-hsuan Lin, Tainan, TW;
Chih-hsun Lin, Tainan, TW;
Ching-hua Chu, Kaohsiung, TW;
Ling-sung Wang, Tainan, TW;
Mei-Hsuan Lin, Tainan, TW;
Chih-Hsun Lin, Tainan, TW;
Ching-Hua Chu, Kaohsiung, TW;
Ling-Sung Wang, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A device includes a semiconductor substrate, a gate stack over the semiconductor substrate, and a stressor region having at least a portion in the semiconductor substrate and adjacent to the gate stack. The stressor region includes a first stressor region having a first p-type impurity concentration, a second stressor region over the first stressor region, wherein the second stressor region has a second p-type impurity concentration, and a third stressor region over the second stressor region. The third stressor region has a third p-type impurity concentration. The second p-type impurity concentration is lower than the first and the third p-type impurity concentrations.