The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Aug. 30, 2011
Chih-hao Lin, Taichung, TW;
Chih-Hao Lin, Taichung, TW;
Winbond Electronics Corp., Taichung, TW;
Abstract
The present invention provides a dynamic random access memory (DRAM) including a plurality of transistors formed in a semiconductor substrate, wherein each of the transistors includes a vertical channel region. A plurality of bit line contained trenches is formed in the semiconductor substrate. Each of the bit line contained trenches comprises two bit lines, and each of the bit lines is electrically connected to an adjacent transistor. Each two sidewalls of each of the bit line contained trenches have a contact formed thereon. A plurality of word lines are formed over the plurality of bit lines and electrical connect to the plurality of transistors. Furthermore, a method for fabricating the DRAM is also provided.