The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

Jul. 27, 2012
Applicants:

Ionut Radu, Crolles, FR;

Christophe Gourdel, Saint Maximin, FR;

Christelle Vetizou, Bernin, FR;

Inventors:

Ionut Radu, Crolles, FR;

Christophe Gourdel, Saint Maximin, FR;

Christelle Vetizou, Bernin, FR;

Assignee:

Soitec, Bernin, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/762 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76254 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01);
Abstract

A method for curing defects associated with the implantation of atomic species into a semiconductor layer transferred onto a receiver substrate, wherein the semiconductor layer is thermally insulated from the receiver substrate by a low thermal conductivity layer having thermal conductivity that is lower than that of the transferred semiconductor layer. The method includes applying a selective electromagnetic irradiation to the semiconductor layer to heat that layer to a temperature lower than its temperature of fusion to cure defects without causing an increase in the temperature of the receiver substrate beyond 500° C.


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Radu, Ionut. (2015). Method for curing defects in a semiconductor layer (U.S. Patent No. 8993461). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8993461

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