The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2015

Filed:

Mar. 06, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si Gyeonggi-do, KR;

Inventors:

Dong-Whan Ko, Suwon-si, KR;

Jong-Sam Kim, Hwaseong-si, KR;

Hong-Jae Shin, Seoul, KR;

Seung-Il Bok, Seoul, KR;

Sae-Il Son, Suwon-si, KR;

Woo-Jin Jang, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/475 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76832 (2013.01); H01L 21/475 (2013.01); H01L 21/76813 (2013.01); H01L 21/76831 (2013.01);
Abstract

A method for fabricating a semiconductor device includes sequentially forming an etch stop film and an insulating film on a substrate including a lower pattern forming a conductive mask pattern including a first opening on the insulating film, forming a via-hole in the insulating film using the conductive mask pattern as an etch mask, the via-hole exposing the etch stop film, removing the conductive mask pattern, and forming a passivation film along a side wall of the via-hole after removing the conductive mask pattern.


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