The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Dec. 07, 2012
Applicants:
Kazunari Nakata, Tokyo, JP;
Yoshiaki Terasaki, Tokyo, JP;
Inventors:
Kazunari Nakata, Tokyo, JP;
Yoshiaki Terasaki, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/78 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02005 (2013.01); H01L 21/78 (2013.01); H01L 21/6836 (2013.01); H01L 2221/68331 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes the steps of preparing a semiconductor wafer having a thick portion in an outer circumferential end portion and a thin portion in a central portion, attaching a support material to one surface of the semiconductor wafer, dividing the semiconductor wafer into the thick portion and the thin portion, and cutting the thin portion, after the division, while supporting the thin portion by the support material.