The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Mar. 08, 2012
Tien-chang LU, Hsinchu, TW;
Huei-min Huang, Hsinchu, TW;
Hao-chung Kuo, Hsinchu, TW;
Shing-chung Wang, Hsinchu, TW;
Tien-Chang Lu, Hsinchu, TW;
Huei-Min Huang, Hsinchu, TW;
Hao-Chung Kuo, Hsinchu, TW;
Shing-Chung Wang, Hsinchu, TW;
National Chiao Tung University, Hsinchu, TW;
Abstract
A method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a sacrificial layer is formed on the GaN thin film, and a nitride-containing semiconductor layer is formed on the sacrificial layer. The semiconductor optical device is immersed with an acidic solution to remove the portion of sacrificial layer to form an air media layer around the residual sacrificial layer.