The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Nov. 16, 2012
Applicant:
Shin-etsu Chemical Co., Ltd., Tokyo, JP;
Inventors:
Shinichi Igarashi, Joetsu, JP;
Hiroki Yoshikawa, Joetsu, JP;
Yukio Inazuki, Joetsu, JP;
Hideo Kaneko, Joetsu, JP;
Assignee:
Shin-Etsu Chemical Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); G06F 19/00 (2011.01); G03F 1/26 (2012.01); G03F 1/80 (2012.01); G03F 1/00 (2012.01);
U.S. Cl.
CPC ...
G06F 19/00 (2013.01); G03F 1/26 (2013.01); G03F 1/80 (2013.01); G03F 1/0046 (2013.01);
Abstract
In conjunction with a photomask blank comprising a transparent substrate, a pattern-forming film, and an etch mask film, a set of etching conditions for the pattern-forming film is evaluated by measuring a first etching clear time (C) taken when the etch mask film is etched under the etching conditions to be applied to the pattern-forming film, measuring a second etching clear time (C) taken when the pattern-forming film is etched under the etching conditions, and computing a ratio (C/C) of the first to second etching clear time.