The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Oct. 29, 2010
Applicants:

Tao Feng, Santa Clara, CA (US);

Zhiqiang Niu, Shanghai, CN;

Yuping Gong, Shanghai, CN;

Ruisheng Wu, Shanghai, CN;

Ping Huang, Shanghai, CN;

Lei Shi, Shanghai, CN;

Yueh-se Ho, Sunnyvale, CA (US);

Inventors:

Tao Feng, Santa Clara, CA (US);

Zhiqiang Niu, Shanghai, CN;

Yuping Gong, Shanghai, CN;

Ruisheng Wu, Shanghai, CN;

Ping Huang, Shanghai, CN;

Lei Shi, Shanghai, CN;

Yueh-Se Ho, Sunnyvale, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 21/683 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6836 (2013.01); H01L 23/495 (2013.01); H01L 23/49537 (2013.01); H01L 21/561 (2013.01); H01L 21/6835 (2013.01); H01L 23/3114 (2013.01); H01L 23/481 (2013.01); H01L 23/49524 (2013.01); H01L 23/49562 (2013.01); H01L 24/34 (2013.01); H01L 24/73 (2013.01); H01L 29/0657 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/6834 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/32245 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/014 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/3511 (2013.01); H01L 2224/16245 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/051 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/94 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04026 (2013.01); H01L 2224/04034 (2013.01); H01L 2224/05009 (2013.01); H01L 2224/05025 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/0616 (2013.01); H01L 2224/291 (2013.01); H01L 2224/73255 (2013.01); H01L 2224/73263 (2013.01); H01L 2224/94 (2013.01); H01L 2224/40247 (2013.01); H01L 2924/10253 (2013.01); H01L 2224/73253 (2013.01);
Abstract

A substrate-less composite power semiconductor device may include a thin substrate and a top metal layer located on a top surface of the substrate. A total thickness of the substrate and the epitaxial layer may be less than 25 microns. Solder bumps are formed on top of the top metal layer and molding compound surrounds the solder bumps and leaves the solder bumps at least partly exposed.


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