The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Jun. 10, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hua-Chou Tseng, Hsinchu, TW;

Chien-Chih Ho, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1079 (2013.01);
Abstract

A semiconductor device includes a substrate having a first type doping. The semiconductor device further includes a first deep well in the substrate, the first deep well having a second type doping. The semiconductor device further includes a second deep well in the substrate, the second deep well having the second type doping and being separated and above the first deep well. The semiconductor device further includes a first well over the second deep well, the first well having the first type doping and a gate structure over the first well.


Find Patent Forward Citations

Tseng, Hua-Chou. (2015). Semiconductor device having a double deep well (U.S. Patent No. 8987825). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8987825

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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