The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Mar. 07, 2012
Misato Sakamoto, Kanagawa, JP;
Yoshitake Katou, Kanagawa, JP;
Youichi Yamamoto, Kanagawa, JP;
Takashi Kyouno, Kanagawa, JP;
Chikara Yamamoto, Yamagata, JP;
Terukazu Motosawa, Yamagata, JP;
Mitsuo Maeda, Yamagata, JP;
Hiroshi Itou, Yamagata, JP;
Misato Sakamoto, Kanagawa, JP;
Yoshitake Katou, Kanagawa, JP;
Youichi Yamamoto, Kanagawa, JP;
Takashi Kyouno, Kanagawa, JP;
Chikara Yamamoto, Yamagata, JP;
Terukazu Motosawa, Yamagata, JP;
Mitsuo Maeda, Yamagata, JP;
Hiroshi Itou, Yamagata, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
With a stage kept in an as-heated state, a semiconductor wafer is placed over the stage. Then, with the elapse of a first time, a controller causes a pressure inside a vacuum chamber to rise to a second pressure higher than a first pressure (step S). After the semiconductor wafer is placed over the stage, a pressure difference between a pressure inside the vacuum chamber and a pressure inside an adsorption port is set to a minimum value at which the semiconductor wafer is not allowed to slide over protrusions. Further, in step Sas well, the pressure difference is kept at the minimum value at which the semiconductor wafer is not allowed to slide over the protrusions.