The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Mar. 29, 2012
Applicants:
Puneet Bajaj, Mountain View, CA (US);
Tong Liu, San Jose, CA (US);
Khalid Mohiuddin Sirajuddin, San Jose, CA (US);
Inventors:
Puneet Bajaj, Mountain View, CA (US);
Tong Liu, San Jose, CA (US);
Khalid Mohiuddin Sirajuddin, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30655 (2013.01); H01L 21/76898 (2013.01);
Abstract
The present disclosure provides methods for etching through-silicon vias (TSVs) in a substrate. The method employs a cyclic polymer passivation layer deposition, depassivation process and plasma etching process. By alternating the duration performed in the plasma etching process and the polymer passivation deposition process during the TSVs formation process, a good sidewall profile and via depth control may be obtained.