The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Apr. 23, 2012
Kazunari Nakata, Tokyo, JP;
Tamio Matsumura, Tokyo, JP;
Kazunari Nakata, Tokyo, JP;
Tamio Matsumura, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device, includes a wafer grinding step of, by means of a revolving grinding stone, forming a thinned portion in a wafer while at the same time forming a slope surrounding said thinned portion, wherein during said formation of said slope, said grinding stone is positioned so that there is always a space between said slope and the facing side of said grinding stone, wherein said thinned portion is thinner than a peripheral portion of said wafer, and wherein said slope extends along and defines an inner circumferential side of said peripheral portion and forms an angle of 75° or more but less than 90° with respect to a main surface of said wafer. The method of manufacturing a semiconductor device further includes a step of forming a semiconductor device in said thinned portion.