The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Feb. 14, 2011
Vance Dunton, San Jose, CA (US);
S. Brad Herner, San Jose, CA (US);
Paul Wai Kie Poon, Fremont, CA (US);
Chuanbin Pan, San Jose, CA (US);
Michael Chan, Mountain View, CA (US);
Michael Konevecki, San Jose, CA (US);
Usha Raghuram, San Jose, CA (US);
Vance Dunton, San Jose, CA (US);
S. Brad Herner, San Jose, CA (US);
Paul Wai Kie Poon, Fremont, CA (US);
Chuanbin Pan, San Jose, CA (US);
Michael Chan, Mountain View, CA (US);
Michael Konevecki, San Jose, CA (US);
Usha Raghuram, San Jose, CA (US);
Sandisk 3D LLC, Milpitas, CA (US);
Abstract
A method of making a semiconductor device includes providing an insulating layer containing a plurality of openings, forming a first semiconductor layer in the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the first semiconductor layer, such that first conductivity type second portions of the first semiconductor layer remain in lower portions of the plurality of openings in the insulating layer, and upper portions of the plurality of openings in the insulating layer remain unfilled. The method also includes forming a second semiconductor layer in the upper portions of the plurality of openings in the insulating layer and over the insulating layer, and removing a first portion of the second semiconductor layer located over the insulating layer. The second conductivity type second portions of the second semiconductor layer remain in upper portions of the plurality of openings in the insulating layer to form a plurality of pillar shaped diodes in the plurality of openings.