The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Jul. 23, 2012
Applicants:
Kuo-cheng Ching, Zhubei, TW;
Kuo-chi Tu, Hsin-Chu, TW;
Chun-yao Chen, Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 27/08 (2006.01); H01L 27/06 (2006.01); H01L 27/108 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0805 (2013.01); H01L 27/0629 (2013.01); H01L 27/10852 (2013.01); H01L 27/10894 (2013.01); H01L 28/91 (2013.01);
Abstract
The present disclosure provides a semiconductor device that includes a semiconductor substrate, an isolation structure formed in the semiconductor substrate, a conductive layer formed over the isolation structure, and a metal-insulator-metal (MIM) capacitor formed over the isolation structure. The MIM capacitor has a crown shape that includes a top electrode, a first bottom electrode, and a dielectric disposed between the top electrode and the first bottom electrode, the first bottom electrode extending at least to a top surface of the conductive layer.