The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Mar. 03, 2010
Applicant:

Ismail I. Kashkoush, Orefield, PA (US);

Inventor:

Ismail I. Kashkoush, Orefield, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 31/18 (2006.01); H01L 31/068 (2012.01); H01L 21/311 (2006.01); H01L 31/028 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1804 (2013.01); H01L 31/068 (2013.01); H01L 31/1892 (2013.01); H01L 21/31111 (2013.01); H01L 31/028 (2013.01); Y02E 10/547 (2013.01);
Abstract

A method for making a solar cell is disclosed. In accordance with the method of the present invention a composite wafer is formed. The composite layer includes a single crystal silicon wafer, a silicon-based device layer and sacrificial porous silicon sandwiched therebetween. The composite wafer is treated to an aqueous etchant maintained below ambient temperatures to selectively etch the sacrificial porous silicon and release or undercut the silicon-based layer from the single crystal silicon wafer. The released silicon device layer is attached to a substrate to make a solar cell and the released single crystal silicon wafer is reused to make additional silicon device layer.


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