The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2015

Filed:

Dec. 19, 2012
Applicant:

Samsung Electronics Co., Ltd., Gyeonggi-do, KR;

Inventors:

Eun-sung Kim, Seoul, KR;

Kyoung-seon Kim, Gyeonggi-do, KR;

Jae-woo Nam, Seoul, KR;

Chul-ho Shin, Gyeonggi-do, KR;

Shi-young Yi, Gyeonggi-do, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01B 13/00 (2006.01); H01L 21/308 (2006.01); G03F 1/00 (2012.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/308 (2013.01); G03F 1/00 (2013.01); H01L 21/0273 (2013.01); H01L 21/0274 (2013.01); H01L 21/0337 (2013.01);
Abstract

A method of forming patterns includes forming a photoresist film on a substrate. The photoresist film is exposed with a first dose of light to form a first area and a second area in the photoresist film. A first hole and a second hole are formed by removing the first area and the second area with a first developer. The photoresist film is re-exposed with a second dose of the light to form a third area in the photoresist film between the first hole and the second hole. A third hole is formed between the first hole and the second hole by removing the third area with a second developer.


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