The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Aug. 30, 2012
Applicants:
Ravi Sunkavalli, Cupertino, CA (US);
Malcolm Wing, Palo Alto, CA (US);
Inventors:
Ravi Sunkavalli, Cupertino, CA (US);
Malcolm Wing, Palo Alto, CA (US);
Assignee:
Adesto Technologies Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 7/00 (2006.01); G11C 7/10 (2006.01); G11C 7/12 (2006.01); G11C 7/22 (2006.01); G11C 11/419 (2006.01); G11C 11/56 (2006.01); G11C 7/08 (2006.01); G11C 11/16 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/5642 (2013.01); G11C 11/419 (2013.01); G11C 7/00 (2013.01); G11C 7/08 (2013.01); G11C 11/1673 (2013.01); G11C 13/004 (2013.01); G11C 16/26 (2013.01); G11C 13/0002 (2013.01);
Abstract
A memory device can include a plurality of memory elements programmable between different impedance states; and circuits configured to apply first electrical conditions to one group of memory elements and second electrical conditions, different from the first electrical conditions, to another group of memory elements to vary a speed of an access operation to the different groups of memory elements.