The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

Feb. 06, 2012
Applicants:

Lung-ching Kao, Taipei, CN;

Pu-ju Kung, Taipei, CN;

Yu-ju Yu, Taipei, TW;

Inventors:

Lung-Ching Kao, Taipei, CN;

Pu-Ju Kung, Taipei, CN;

Yu-Ju Yu, Taipei, TW;

Assignee:

Vishay General Semiconductor, LLC, Hauppauge, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 3/22 (2006.01); H01L 29/868 (2006.01); H01L 27/08 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H02H 3/20 (2006.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/868 (2013.01); H01L 27/0814 (2013.01); H01L 27/0817 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01);
Abstract

A low forward voltage drop transient voltage suppressor utilizes a low-reverse-voltage-rated PN diode electrically connected in parallel to a high-reverse-voltage-rated Schottky rectifier in a single integrated circuit device. The transient voltage suppressor is ideally suited to fix the problem of high forward voltage drop of PN diodes and high leakage of low reverse breakdown of Schottky rectifiers. The low-reverse-voltage PN rectifier can be fabricated through methods such as 1) double layers of epi (with higher concentration layer epi in the bottom) or 2) punch through design of PN diode by base with compression.


Find Patent Forward Citations

Loading…