The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Sep. 14, 2012
Zhen-yu LI, Chiayi County, TW;
Chung-pao Lin, New Taipei, TW;
Hsing-kuo Hsia, Hsin Chu County, TW;
Hao-chung Kuo, Hsin-Tsu County, TW;
Cindy Huichun Shu, Hsinchu, TW;
Hsin-chieh Huang, Hsin-Chu, TW;
Zhen-Yu Li, Chiayi County, TW;
Chung-Pao Lin, New Taipei, TW;
Hsing-Kuo Hsia, Hsin Chu County, TW;
Hao-Chung Kuo, Hsin-Tsu County, TW;
Cindy Huichun Shu, Hsinchu, TW;
Hsin-Chieh Huang, Hsin-Chu, TW;
TSMC Solid State Lighting Ltd., Hsinchu, TW;
Abstract
The present disclosure involves an apparatus. The apparatus includes a substrate having a front side a back side opposite the front side. The substrate includes a plurality of openings formed from the back side of the substrate. The openings collectively define a pattern on the back side of the substrate from a planar view. In some embodiments, the substrate is a silicon substrate or a silicon carbide substrate. Portions of the silicon substrate vertically aligned with the openings have vertical dimensions that vary from about 100 microns to about 300 microns. A III-V group compound layer is formed over the front side of the silicon substrate. The III-V group compound layer is a component of one of: a light-emitting diode (LED), a laser diode (LD), and a high-electron mobility transistor (HEMT).