The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Aug. 23, 2011
Jie-ning Yang, Ping-Tung County, TW;
Shih-chieh Hsu, New Taipei, TW;
Yao-chang Wang, Tainan, TW;
Chi-horn Pai, Tainan, TW;
Chi-sheng Tseng, Tainan, TW;
Kun-szu Tseng, Tainan, TW;
Ying-hung Chou, Tainan, TW;
Chiu-hsien Yeh, Tainan, TW;
Jie-Ning Yang, Ping-Tung County, TW;
Shih-Chieh Hsu, New Taipei, TW;
Yao-Chang Wang, Tainan, TW;
Chi-Horn Pai, Tainan, TW;
Chi-Sheng Tseng, Tainan, TW;
Kun-Szu Tseng, Tainan, TW;
Ying-Hung Chou, Tainan, TW;
Chiu-Hsien Yeh, Tainan, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for forming a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, forming a transistor having a polysilicon dummy gate in the transistor region and a polysilicon main portion with two doped regions positioned at two opposite ends in the resistor region, performing an etching process to remove the polysilicon dummy gate to form a first trench and remove portions of the doped regions to form two second trenches, and forming a metal gate in the first trench to form a transistor having the metal gate and metal structures respectively in the second trenches to form a resistor.