The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

Apr. 24, 2013
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Shih-Guei Yan, Hsinchu, TW;

Wen-Jer Tsai, Hsinchu, TW;

Chih-Chieh Cheng, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 21/336 (2006.01); H01L 27/115 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 21/28282 (2013.01);
Abstract

A semiconductor structure uses its control gate to be the wordline for receiving an operation voltage for the semiconductor structure. The semiconductor structure has a first and a second doped region and a buried channel between the first and the second doped region, wherein the buried channel has a first length along the first direction. The semiconductor structure further has a charge trapping layer stack on the buried channel and a conductive layer on the charge trapping layer stack, wherein the conductive layer extends along the first direction. The conductive layer is configured as both the control gate and the wordline of the semiconductor structure.


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