The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Feb. 07, 2013
Idemitsu Kosan Co., Ltd., Tokyo, JP;
Koki Yano, Chiba, JP;
Hirokazu Kawashima, Chiba, JP;
Kazuyoshi Inoue, Chiba, JP;
Shigekazu Tomai, Chiba, JE;
Masashi Kasami, Chiba, JP;
Idemitsu Kosan Co., Ltd, Tokyo, JP;
Abstract
A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3):In/(In+Zn)=0.2 to 0.8   (1)In/(In+Ga)=0.59 to 0.99   (2)Zn/(Ga+Zn)=0.29 to 0.99   (3).