The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2015

Filed:

Mar. 04, 2013
Applicant:

Sandisk 3d Llc, Milpitas, CA (US);

Inventors:

Yung-Tin Chen, Santa Clara, CA (US);

Chuanbin Pan, Sunnyvale, CA (US);

Andrei Mihnea, San Jose, CA (US);

Steven Maxwell, Sunnyvale, CA (US);

Kun Hou, Milpitas, CA (US);

Assignee:

SanDisk 3D LLC, Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 21/8238 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/146 (2013.01); H01L 45/08 (2013.01); H01L 45/1616 (2013.01); H01L 45/1233 (2013.01); H01L 27/2409 (2013.01); H01L 27/2481 (2013.01); H01L 27/2418 (2013.01); H01L 45/12 (2013.01); Y10S 438/957 (2013.01);
Abstract

In some embodiments, a memory cell is provided that includes a metal-insulator-metal stack and a steering element coupled to the metal-insulator-metal stack. The metal-insulator-metal stack includes a first conductive layer, a reversible resistivity switching layer above the first conductive layer, and a second conductive layer above the reversible resistivity switching layer. The first conductive layer and/or the second conductive layer includes a first semiconductor material layer. The steering element includes the first semiconductor material layer. Numerous other aspects are provided.


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