The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2015
Filed:
Sep. 21, 2010
Yeng-peng Wang, Kaohsiung County, TW;
Chun-hsien Lin, Tainan County, TW;
Chiu-hsien Yeh, Tainan, TW;
Chin-cheng Chien, Tainan County, TW;
Chan-lon Yang, Taipei, TW;
Yeng-Peng Wang, Kaohsiung County, TW;
Chun-Hsien Lin, Tainan County, TW;
Chiu-Hsien Yeh, Tainan, TW;
Chin-Cheng Chien, Tainan County, TW;
Chan-Lon Yang, Taipei, TW;
United Mircroelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating a metal gate transistor is disclosed. The method includes the steps of: providing a substrate having a first transistor region and a second transistor region; forming a first metal-oxide semiconductor (MOS) transistor on the first transistor region and a second MOS transistor on the second transistor region, in which the first MOS transistor includes a first dummy gate and the second MOS transistor comprises a second dummy gate; forming a patterned hard mask on the second MOS transistor, in which the hard mask includes at least one metal atom; and using the patterned hard mask to remove the first dummy gate of the first MOS transistor.